SUP/SUB75N06-08
N-Channel Enhancement-Mode Transistors
Product Summary
V
(BR)DSS
(V)
60
TO-220AB
TO-263
G
DRAIN connected to TAB
G D S
Top View
SUB75N06-08
S
N-Channel MOSFET
r
DS(on)
(W)
0.008
I
D
(A)
75
a
D
G D S
Top View
SUP75N06-08
Absolute Maximum Ratings (
T
C
= 25_C Unless Otherwise Noted
)
Parameter
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
"20
75
a
55
240
60
280
187
c
3.7
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
Junction to Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document # 70283.
A SPICE Model data sheet is available for this product (FaxBack document #70527).
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.8
Unit
_C/W
Siliconix
S-47969—Rev. D, 08-Jul-96
1
TEMIC [ TEMIC SEMICONDUCTORS ]
