TE13004D
•
TE13005D
Silicon NPN High Voltage Switching Transistor
Features
D
D
D
D
D
D
D
D
Monolithic integrated C-E-free-wheel diode
HIGH SPEED technology
Planar passivation
Very short switching times
Very low switching losses
Very low dynamic saturation
Very low operating temperature
High reverse voltage
14283
Applications
Electronic lamp ballast circuits
Switch-mode power supplies
Absolute Maximum Ratings
T
case
= 25°C, unless otherwise specified
Parameter
Collector-emitter voltage
g
Test Conditions
Type
TE13004D
TE13005D
TE13004D
TE13005D
Symbol
V
CEO
V
CEO
V
CES
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Value
300
400
600
700
9
6
8
2
4
57
150
–65 to +150
Unit
V
V
V
V
V
A
A
A
A
W
°
C
°
C
Emitter-base voltage
Collector current
Collector peak current
Base current
Base peak current
Total power dissipation
Junction temperature
Storage temperature range
T
case
≤
25
°
C
Maximum Thermal Resistance
T
case
= 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
R
thJC
Value
2.2
Unit
K/W
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
1 (9)
TEMIC [ TEMIC SEMICONDUCTORS ]
