TFMS 5..0
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.0
0.8
0.6
2.0
1.6
f(E)=f
0
1.2
0.8
0.4
0.2
0.4
0.0
f = f 5%
0
f ( 3dB ) = f /10
0
0.0
1.3
2.0
0.7
0.8
0.9
1.0
1.1
1.2
0.0
0.4
0.8
1.2
1.6
94 8143
f/f – Relative Frequency
0
94 8147
E – Field Strength of Disturbance ( kV/m )
Figure 1. Frequency Dependence of Responsivity
1200
Figure 4. Sensitivity vs. Electric Field Disturbances
100
1000
800
600
400
200
0
Input Burst Duration
f = f
0
10
1
10 kHz
= 950 nm, Optical Test Signal, Fig.7
100 Hz
100
0.1
100.0
1000
0.1
1.0
10.0
0.1
1
10
2
94 8145
E – Irradiance ( mW/m )
94 8148
V
s RMS –
AC Voltage on DC Supply Voltage (mV)
e
Figure 2. Sensitivity in Dark Ambient
Figure 5. Sensitivity vs. Supply Voltage Disturbances
1.0
100.0
10.0
1.0
Correlation with Ambient Light Sources
(Disturbance Efect):10W/m2 1.4klx
(Stand.Illum.A,T=2855K) 8.2klx
(Daylight,T=5900K)
Sensitivity in dark Ambient
0.8
0.6
0.4
0.2
Ambient, = 950 nm
0.1
0.0
100.0
90
0.01
0.1
1.0
10.0
–30
0
30
60
2
94 8146
E – Irradiance ( W/m )
94 8149
T
amb
– Ambient Temperature ( °C )
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
3 (6)
Rev. A4, 15-Jul-96
TEMIC [ TEMIC SEMICONDUCTORS ]
