TFMS 5..0
Typical Characteristics
(T
amb
= 25
_
C unless otherwise specified)
E
e min
– Threshold Irradiance ( mW/m
2
)
1.0
E
e min
/ E
e
– Rel. Responsitivity ( % )
0.8
2.0
f ( E ) = f
0
1.6
1.2
0.8
0.4
0.0
0.7
94 8143
0.6
0.4
0.2
0.0
0.8
0.9
1.0
1.1
1.2
1.3
f / f
0
– Relative Frequency
f = f
0
5%
D
f ( 3 dB ) = f
0
/ 10
"
0.0
94 8147
0.4
0.8
1.2
1.6
2.0
E – Field Strength of Disturbance ( kV / m )
Figure 1. Frequency Dependence of Responsivity
1200
t
po
– Output Pulse Length (
m
s )
1000
800
600
400
200
0
0.1
94 8145
Figure 4. Sensitivity vs. Electric Field Disturbances
100
f = f
0
10
10 kHz
1
100 Hz
Input Burst Duration
l
= 950 nm, Optical Test Signal, Fig.7
E
e min
– Threshold Irradiance ( mW/m
2
)
0.1
1.0
10.0
100.0
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0.1
1
10
100
1000
E
e
– Irradiance ( mW / m
2
)
D
V
s RMS –
AC Voltage on DC Supply Voltage ( mV )
Figure 2. Sensitivity in Dark Ambient
100.0
Correlation with Ambient Light Sources
( Disturbance Efect ) : 1 0W/m2 1.4 klx
( Stand.Illum.A, T = 2855 K ) 8.2 klx
( Daylight, T = 5900 K )
10.0
Figure 5. Sensitivity vs. Supply Voltage Disturbances
1.0
0.8
Sensitivity in dark Ambient
E
e min
– Threshold Irradiance ( mW/m
2
)
^
^
E
e min
– Threshold Irradiance ( mW/m
2
)
100.0
94 8149
0.6
0.4
0.2
0.0
–30
1.0
Ambient,
l
= 950 nm
0.1
0.01
0.1
1.0
10.0
0
30
60
90
94 8146
E – Irradiance ( W / m
2
)
T
amb
– Ambient Temperature (
°C
)
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors
Rev. A4, 15-Jul-96
3 (6)
TEMIC [ TEMIC SEMICONDUCTORS ]
