TSSP4400
GaAs/GaAlAs Infrared Emitting Diode in Sideview Package
Description
TSSP4400 is a high intensity infrared emitting diode in
GaAlAs on GaAs technology, molded in a clear, blue–
grey tinted plastic package with spherical side view lens.
The device is spectrally matched to silicon photodiodes
and phototransistors.
Features
D
D
D
D
D
D
High radiant power and high radiant intensity
Suitable for high pulse current operation
Low forward voltage
Angle of half intensity
ϕ
=
±
22
°
Peak wavelength
l
p
= 925 nm
High reliability
94 8491
Applications
High power infrared emitter in light curtains, light barriers, transmissive or reflective sensors in combination with PIN
photodiodes or phototransistors.
Infrared remote control and free air transmission systems for long transmission distance and medium wide angle
requirements in combination with PIN photo diodes or photo modules.
Suitable as replacement of CQX47.
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
2.0
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
°
C
K/W
t
p
/T=0.5, t
p
=100
m
s
t
p
=100
m
s
t
x
5sec, 2 mm from case
TELEFUNKEN Semiconductors
Rev. A3, 16-Oct-96
1 (5)
TEMIC [ TEMIC SEMICONDUCTORS ]
