U2309B
Electrical Characteristics (continued)
Parameters
Band A
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
Test Conditions / Pins
Pin 24
Figure 3
Pin 24
Pin I/P to O/P
Pin I/P to O/P
fiA = 50 MHz
fiA = 150 MHz
Each carrier
fiA = 71 MHz
Pin I/P
fiA = 71 MHz
Pin I/P
Pin 22, 23
Pin 22, 23
Pin I/P to O/P
Pin I/P to O/P
fiB = 200 MHz
fiB = 450 MHz
Each carrier
fiB = 300 MHz
Pin I/P
Symbol
fiA
S11A
GA
NF
NF
ViA
ViA
fiA
S11B
GB
NF
NF
ViB
fiC
S11C
GC
NF
NF
ViC
470
32
10.5
11.5
–28
170
see Fig. 3
32
9.5
10
–28
860
Min
48
28
11.5
12
–23
–22
470
Typ
Max
170
Unit
MHz
dB
dB
dB
dBm
dBm
MHz
dB
dB
dB
dBm
MHz
dB
dB
dB
dBm
Input level for (note 3):
IM3 (interm. of 3rd order
IM2 (interm. of 2nd order)
Band B (note 1)
Input frequency range
Input impedance
Gain (note 4)
Noise figure DSB (note 2)
Input level for (note 3):
IM3 (interm. of 3rd order)
Band C (note 1)
Input frequency range
Input impedance
Gain
Noise figure DSB (note 2)
Pin 20, 21
Figure 3
Pin 20, 21
Pin I/P to O/P
Pin I/P to O/P
fiC = 500 MHZ
fiC = 800 MHz
Input level for IM3
Each carrier
(interm. of 3rd order, note 3) fiC = 600 MHz
Pin I/P
Notes
1)
2)
3)
4)
The RF inputs B and C are symmetrical driven by means of a hybrid for 180° phase shifting, consequently the
source impedance is 100
W
. All other impedance for RF tests is 50
W
.
The noise figure (NF) is the value for double-side-band measurement.
The intermodulation test (2-carrier-method) which is made on IF-centre is in reference to a signal-to-IM ratio
of 60 dB.
Gain is the ratio of the voltage at the primary coil of L5 to the available voltage at the input.
4 (8)
TELEFUNKEN Semiconductors
Rev. A2, 29-May-96
TEMIC [ TEMIC SEMICONDUCTORS ]
