D4
Mains
D5
D1
R2
0.1
m
F
From Pin 15
VS
10 nF
C0
13
12
11
1 k
W
D
7
Red
R5
From
RT1 / RT2
560 k
W
0.22
m
F
R0
270 k
W
R4
C2
14
R
Oscillator
16
ϕ
VRef
6.5 V/10 mA
ϕ
R1
D6
10 k
W
R3
2.2 k
W
10 nF
17
Sync
C
Phase control
V
ϕ
i
To Pin 4
1
Trigger output
Gradient
C1
VS 15
2
Power supply
VS = 8 to 26 V
470
m
F
d2 V/dt 2 & –dV
VBatt Monitor
0.1 to 4 V
160 mV
Ref
5
6
1
m
F
CR
10 k
W
Temp. control
Tmax Sensor
1
m
F
C4
RT3
R6
24 k
W
C8
0.1
m
F
7
8
Control unit
Battery
detection
VRef = 5 V
18
2x
560
W
R7
C6
R13
C3
10
W
T1
BC 308
R10
100 k
W
R8
1 k
W
TELEFUNKEN Semiconductors
Rev. A2, 14-Nov-96
D8
Green
R11
R9
10 k
W
1 k
W
Status
control
3
Scan path
RB1
1 k
W
I ch
10
Power on
control
NTC
4
Charge break
output
RT1 12 k
W
To VRef (Pin 14)
RT2
100 k
W
9
D2
Th1
D3
Th2
RB2
C7
10 k
W
4.7
m
F
16 k
W
Figure 2. Block diagram with external circuit (DIP pinning)
RB3
Battery
(4 cells)
DC
160 mV
Rsh
0.2
W
U2405B
94 8674
3 (17)
TEMIC [ TEMIC SEMICONDUCTORS ]
