U2891B
Electrical Characteristics: Mixer
TELEFUNKEN Semiconductors
V
S
= 3 V, f
LO2
= 800 MHz, f
IF
= 100 MHz, P
LO2
= – 10dBm, system impedance Zo = 50
W,
T
amb
= 25
°C,
reference
point Pin 10, unless otherwise specified
Parameters
Operating frequencies
RF
O
frequency
LO2 frequency
Isolation
LO2 spurious at RF
o
Test Conditions / Pin
Pin 16
Pin 9
Pin 9–16
P
iLO
= – 10 to 0 dBm
Pin 16–9
Symbol
RF
O
f
LO2
IS
LO2
-
RFo
IS
RFo-LO2
Min.
50
50
Typ.
Max.
2500
2500
Unit
Ad
ro
nic
C
RF
o
to LO2
Output level
Output compression point
Pin 16 R
Po
=
R
Input level
Input compression point
1)
Pins 11 and 12
Input LO2
Pin 9
Third order input
Pins 11 and 12
1)
intercept point
Voltage standing wave ratio (VSWR)
Input IF
Pins 11 and 12
Input LO2
Pin 9
Output RF
Pin 16
Conversion power gain
R
L
= 50
W
Noise Figure (SSB)
2)
P
iLO
= – 6 dBm
Power-down mode
Supply current
V
PD
v
0.5 V Pin 13
Settling time
C
SPD
100 pF,
C
LO
= 100 pF, C
RFo
= 1 nF
Power down voltage
Pin 13
“Power on”
V
S
= 3.5 to 5.5 V
V
S
= 2.7 to 3.5 V
“Power down”
Power down current
Power on
Power down
Note:
1
)
with 50
W
termination resistor at Pin 11
2)
without termination resistor
CP
o
– 1 dB
CP
i
– 1dB
P
LO2
P
iIIP3
nt
s
V
S
– 0.5
V
S
om
po
ne
VSWR
IFi
VSWR
LO2
VSWR
RF
PG
C
NF50
I
PD
t
S
V
PON
V
PDN
I
PON
I
PDN
4 (6)
Advanced Information
Gm
bH
– 30
tbd.
–7
–15
–10
–6
tbd.
tbd.
tbd.
9
13
<5
10
V
S
+0.5
V
S
+0.5
1
0.15
<1
MHz
MHz
dBm
dB
dBm
dBm
dBm
dBm
dB
dB
mA
ms
V
V
V
mA
mA
Rev. A2: 04.10.1995
TEMIC [ TEMIC SEMICONDUCTORS ]
