U3810BM
Absolute maximum ratings
Parameters
DC calling voltage (pin 2)
DC calling current (pin 2)
Conversation line voltage (pin 10)
Conversation line current
Total power dissipation *)
Operating temperature range
Storage temperature range
Junction temperature
Symbol
VRI
IR
V
L
I
L
P
tot
T
amb
T
stg
T
j
TELEFUNKEN Semiconductors
Value
35
30
15
17
150
1
– 25 to + 55
– 55 to + 150
125
Unit
V
mA
V
V pulse 20 ms
mA
W
°C
°C
°C
Thermal resistance
Parameters
Junction ambient *)
Symbol
R
thJA
Value
70
Unit
K/W
Electrical characteristics
I
L
= 28 mA, T
amb
= 25°C, f = 1 kHz, R
DC
= 20 kΩ, all internal registers cleared, unless otherwise specified
C1
L1
C0
94 7894 e
R1
D
455 kHz ceramic resonator: MURATA or equivalent
D
Refer to the tests circuits
Resonance factor Q
m
= 3100, L1 = 6.1 mH, C1 = 21 pF, CO = 268.5 pF, R1 = 5.5
W
(Schematic above)
All resistances are specified at 1%, all capacitances at 2%.
Parameters
Line voltage
Test conditions
I
L
= 15 mA
I
L
= 28 mA
I
L
= 60 mA
I
L
= 8 mA, –Idd (ICC) = 0.6 mA
I
L
= 28 mA, –Idd (ICC) = 2.3 mA
S4 on 3
Min.
4.2
6.7
12.8
2.5
3.2
Typ.
4.75
7.2
13.45
2.65
3.45
180
Max.
5.2
7.5
14.1
3.6
210
Unit
V
Fig.
6
Figure 5
VDD, VCC stabilized
power supply
IDD at VDD = 3.5 V
Internal operating supply
current
Leakage current
Speed up off threshold
VSOFF
Speed up on line– current
ISON
Speed up current
V
m
A
nA
V
mA
mA
6
9
See fig. 11
See fig. 14
V
L
= 4 V
I
Lmax
= 80 mA
V
L
= 4 V
I
L
decreasing
VDD = 2.8 V
2.45
5.0
40
2.65
5.9
70
100
2.8
7.5
7
*) Note: Assembly on PC board
w
24 cm
7
2
assumed
10 (31)
Rev. A1: 19.01.1996
TEMIC [ TEMIC SEMICONDUCTORS ]
