U4050B
Absolute Maximum Ratings
Parameters
Line current
Line voltage
Junction temperature
Ambient temperature
Storage temperature
Total power dissipation (T
amb
= 60°C, SO28)
Symbol
I
L
V
L
T
j
T
amb
T
stg
P
tot
Value
140
15
150
–25 to +75
–55 to +150
750
Unit
mA
V
°C
°C
°C
mW
Thermal Resistance
Parameters
Junction ambient SO28
Symbol
R
thJA
Value
120
Unit
K/W
Electrical Characteristics
Test conditions unless otherwise specified: f = 1 kHz, 0 dBm = 775 V
rms
, I
M
= 0.3 mA, I
D
= 2 mA, RC = 130 kΩ,
T
amb
= 25°C, R
GSA
= 560 kΩ, Z
H
= Z
M
= 68 nF, Pin AGA open
Parameters
DC characteristics
Test Conditions / Pins
Symbol
see figure 4
I
L
= 2 mA
V
L
I
L
= 15 mA
V
L
I
L
= 19 mA
V
L
I
L
= 30 mA
V
L
I
L
= 100 mA
V
L
see figures 5 and 11
I
L
= 15 mA
I
L
= 15 mA
I
L
15 A, C
L
= 4.7 nF
f = 300 to 3400 Hz
Pin AGA open
I
L
= 15 to 100 mA
T
amb
= – 10 to + 60°C
I
L
= 15 mA
G
S
G
S
D
G
S
Min.
Typ.
1.9
5.2
5.4
6.0
9.5
Max.
Unit
V
V
V
V
V
DC voltage drop
oltage
over circuit
4.8
5.6
Transmission amplifier
Adjustment
range of transmit gain
Transmitting
amplification
Frequency response
Gain change with current
Gain deviation
CMRR of microphone
amplifier
Input resistance of MIC
amplifier
Distortion at line
Maximum output voltage
Noise at line
psophometrically weighted
Anticlipping
attack time
Release time
40
47.75
48
48.25
56
dB
dB
dB
w
"
48.75
0.5
D
G
S
D
G
S
CMRR
R
i
60
45
80
60
"
0.5
"
0.5
80
2
dB
dB
dB
kΩ
%
I
L
> 15 mA
V
L
= 775 mV2rms
I
L
> 19 mA d < 5%
V
mic
= 10 m
I
L
> 15 mA
G
S
= 48 dB
V
mic
= 20 mV
C = 470 nF
Each 3 dB overdrive
d
s
V
1max
n
o
1.8
3
– 80
4.2
–72
dBm
dBmp
0.5
9
ms
ms
4 (18)
Rev. A2, 05-Mar-98
TEMIC [ TEMIC SEMICONDUCTORS ]
