N Channel Enhancement Mode MOS Transistors
Product Summary
Part Number
VN2010L
BS107
Siliconix
VN2010L/BS107
V
(BR)DSS
Min (V)
200
r
DS(on)
Max (W)
10 @ V
GS
= 4.5 V
28 @ V
GS
= 2.8 V
V
GS(th)
(V)
0.8 to 1.8
0.8 to 3
I
D
(A)
0.19
0.12
Features
D
D
D
D
D
Low On Resistance: 6
W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Benefits
D
D
D
D
D
Low Offset Voltage
Full Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High Temperature
Run Away"
Applications
D
High Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO 226AA
(TO 92)
S
G
D
1
TO 92 18RM
(TO 18 Lead Form)
D
G
S
1
2
2
3
Top View
VN2010L
3
Top View
BS107
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain Source Voltage
Gate Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Symbol
V
DS
V
GS
T
A
= 25_C
T
A
= 1 0 0
_C
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VN2010L
200
"30
0.19
0.12
0.8
0.8
0.32
156
-55 to 150
BS107
200
"25
0.12
Unit
V
A
0.5
250
Power Dissipation
Maximum Junction to Ambient
Operating Junction and Storage Temperature Range
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
P-38283—Rev.
B (08/15/94)
1
TEMIC [ TEMIC SEMICONDUCTORS ]
