TIGER ELECTRONIC CO.,LTD
2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The 2N5551 is designed for amplifier transistor.
Features
•
Complements to PNP Type 2N5401.
•
High Collector-Emitter Breakdown Voltage. VCEO>160V (@IC=1mA)
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCEO Collector to Emitter Voltage .................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
fT
Cob
Min.
180
160
6
-
-
-
-
-
-
>80
80
50
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
160
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
400
-
300
6
Unit
V
V
V
nA
nA
V
V
V
V
Test Conditions
IC=100uA, IE=0
IC=1.0mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=4V, IC=0
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
MHz
pF
Classification of hFE2
Rank
Range
A
80-200
N
100-250
C
160-400
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
