TIGER ELECTRONIC CO.,LTD
2SA1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The
2SA1015
is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ..................................................................................... +150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 50 V
VCEO Collector to Emitter Voltage ..................................................................................... 50 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 150 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
fT
Cob
Min.
50
50
5
Typ.
Max.
Unit
V
V
V
nA
nA
mV
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, f=1MHz, IE=0
120
25
80
100
100
300
1.1
700
7.0
MHz
pF
Classification Of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
