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2SA1020 参数 Datasheet PDF下载

2SA1020图片预览
型号: 2SA1020
PDF下载: 下载PDF文件 查看货源
内容描述: TO- 92L塑封装晶体管( PNP ) [TO-92L Plastic-Encapsulate Transistors (PNP)]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 156 K
品牌: TGS [ Tiger Electronic Co.,Ltd ]
 浏览型号2SA1020的Datasheet PDF文件第2页浏览型号2SA1020的Datasheet PDF文件第3页  
TIGER ELECTRONIC CO.,LTD
TO-92L Plastic-Encapsulate Transistors
2SA1020
TRANSISTOR (PNP)
TO-92L
1. EMITTER
2. COLLECTOR
FEATURES
Power amplifier applications
MAXIMUM RATINGS (T
A
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
900
150
-55-150
Units
V
V
V
A
mW
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
ts
tf
V
CC
=-30V,I
B1
=-I
B2
=-0.05A, I
C
=-1A
V
CE
=-2V,I
C
=-1.5A
I
C
=-1A,I
B
=-50mA
I
C
=-1A,I
B
=-50mA
V
CE
=-2V,I
C
=-500mA
V
CB
=-10V,I
E
=0,f=1MHz
100
40
0.1
1
0.1
40
-0.5
-1.2
V
V
MHz
pF
μs
μs
μs
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
Test
conditions
MIN
-50
-50
-5
-1
-1
70
240
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
=-100µA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-50V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-2V,I
C
=-0.5A
CLASSIFICATION OF
Rank
Range
h
FE(1)
O
70-140
Y
120-240