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2SA950 参数 Datasheet PDF下载

2SA950图片预览
型号: 2SA950
PDF下载: 下载PDF文件 查看货源
内容描述: TO- 92塑封装晶体管( PNP ) [TO-92 Plastic-Encapsulate Transistors (PNP)]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 253 K
品牌: TGS [ Tiger Electronic Co.,Ltd ]
 浏览型号2SA950的Datasheet PDF文件第2页  
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
2SA950
TRANSISTOR (PNP)
TO-92
FEATURES
1W
Output Applications
Complementary
to 2SC2120
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-35
-30
-5
-0.8
0.6
150
-55 to +150
Unit
V
V
V
A
W
1.EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Emitter-base voltage
V
CE(sat)
V
BE
V
CE
=-1V, I
C
= -700mA
I
C
= -500mA, I
B
= -20mA
V
CE
=-1V, I
C
=-10mA
VCB=-10V,IE=0
f=1MHz
V
CE
=-5V,I
C
=-10mA
-0.5
35
-0.7
-0.8
V
V
Test
conditions
Min
-35
-30
-5
-0.1
-0.1
100
320
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -0.1mA , I
E
=0
I
C
= -10mA , I
B
=0
I
E
= -0.1mA, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
Collector Output Capacitance
C
ob
19
pF
Transition frequency
f
T
120
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
O
100-200
Y
160-320
B,Nov,2011