TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
2SD1047 / 2SB817
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
160
140
6.0
12
1.2
100
150
-55~150
Unit
V
V
V
A
A
W
o
C
C
Storage Temperature
o
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
Symbol
Test Conditions
V
CB
=140V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=5.0V, I
C
=1.0A
V
CE
=5.0V, I
C
=6.0A
Min.
—
—
140
60
20
—
—
—
Typ.
—
—
—
—
—
—
—
15
300
Max.
10
10
—
200
—
2.5
1.5
—
V
V
MHz
pF
Unit
uA
uA
V
O
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
V
BE
f
T
C
OB
V
CE(sat)
I
C
=5.0A,I
B
=0.5A
V
CE
=5.0V,I
C
=1.0A
V
CE
=5.0V,I
C
=1.0A
V
CB
=-10V, I
E
=0, f=1MHz
Note : hfe1 Classification D: 60~120, E: 100~200
TGS [ Tiger Electronic Co.,Ltd ]
