TIGER ELECTRONIC CO.,LTD
2SC1959
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The
2SC1959
is designed for audio frequency Low power amplifier
applications.
Features
•
Excellent hFE Linearity.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................... -55~+150°C
Junction Temperature ....................................................................................... 150°C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 500 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 35 V
VCEO Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEB
ICBO
IEBO
VCE(sat)
VBE(on)
hFE1
hFE2
fT
Cob
Min.
35
30
5
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
-
-
-
-
300
7.0
Max.
-
-
-
100
100
0.25
1.0
240
-
-
-
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=20mA, VCE=6V
IE=0, VCB=6V, f=1MHZ
MHz
pF
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
