TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
BC546/BC547/BC548
TRANSISTOR (NPN)
FEATURES
High Voltage
Complement to BC556,BC557,BC558
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
Parameter
Collector-Base Voltage
V
CBO
Collector-Emitter Voltage
V
CEO
V
EBO
I
C
P
D
T
J
T
stg
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
BC546
BC547
BC548
BC546
BC547
BC548
Value
80
50
30
65
45
30
6
100
625
150
-55-150
Unit
TO-92
1. COLLECTOR
2. BASE
3. EMITTER
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC546
BC547
BC548
BC546
BC547
BC548
Symbol
V
CBO
Test
conditions
Min
80
50
30
65
45
30
6
0.1
Max
Unit
V
I
C
= 100μA , I
E
=0
Collector-emitter breakdown voltage
V
CEO
V
EBO
I
CBO
I
C
= 1mA , I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 70V, I
E
=0
V
CB
= 50 V, I
E
=0
V
CB
= 30V, I
E
=0
V
CE
= 60 V, I
B
=0
V
CE
= 45 V, I
B
=0
V
CE
= 30 V, I
B
=0
V
EB
= 5V, I
C
=0
V
V
μA
Emitter-base breakdown voltage
Collector cut-off current
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546
BC547
BC548
BC546A/BC547A/BC548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
Collector cut-off current
I
CEO
0.1
μA
Emitter cut-off current
I
EBO
0.1
110
110
110
110
200
420
800
800
800
220
450
800
0.3
1.1
150
μA
DC current gain
h
FE
V
CE
=5V, I
C
= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
I
C
=100mA, I
B
= 5mA
I
C
= 100mA, I
B
=5mA
V
CE
= 5V, I
C
= 10mA
f = 100MHz
V
V
MHz
A,May,2011
TGS [ Tiger Electronic Co.,Ltd ]
