TIGER ELECTRONIC CO.,LTD
Product specification
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
DESCRIPTION
The BD681, are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD682,
respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
BD681/BD682
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
100
100
5
4.0
0.1
40
150
-55~150
Unit
V
V
V
A
A
W
o
C
C
Storage Temperature
o
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
R
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Symbol
Test Conditions
V
CE
=100V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=3V, I
C
=1.5A
Min.
—
—
—
100
750
—
—
Typ.
—
—
—
—
—
—
—
Max.
0.2
0.5
2.0
—
—
2.5
2.5
V
V
Unit
mA
mA
mA
V
O
I
CEO
I
CBO
I
EBO
V
CEO
h
FE(1)
V
CE(sat)
I
C
=1.5A,I
B
=30mA
V
BE
V
CE
=3V,I
C
=1.5A
TGS [ Tiger Electronic Co.,Ltd ]
