TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Darlington Ttransistors
BDX53F / BDX54F
DESCRIPTION
The BDX53F are silicon Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in Jedec TO-220 plastic package.
They are intented for use in hammer drivers, audio amplifiers and
other medium power linear and switching applications.
The complementary PNP types are BDX54F respectively.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
O
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
160
160
5
8.0
0.2
60
150
-55~150
Unit
V
V
V
A
A
W
o
C
C
Storage Temperature
o
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Parallel-diode Forward Voltage
Symbol
Test Conditions
V
CB
=160V, I
E
=0
V
CE
=80V, I
B
=0
V
EB
=5.0V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=5V, I
C
=2.0A
Min.
—
—
—
160
500
—
—
—
Typ.
—
—
—
—
—
—
—
—
Max.
0.2
0.5
2.0
—
—
2.0
2.5
2.5
V
V
V
Unit
mA
mA
mA
V
O
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
V
CE(sat)
I
C
=2.0A,I
B
=10mA
V
BE(sat)
I
C
=2.0A,I
B
=10mA
V
F
I
F
=2A
TGS [ Tiger Electronic Co.,Ltd ]
