TIGER ELECTRONIC CO.,LTD
Product specification
Thyristors logic level
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors ina plastic envelope, intended
foruse in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate
trigger circuits.
BT169 series
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
T
j
T
stg
Typ
BT169D BT169G
O
Unit
V
A
A
A
o
400
0.5
0.8
8.0
110
600
C
C
TO-92
-45~150
O
o
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Repetitive peak off-state voltage
s
Average on-state current
RMS on-state current
On-state voltage
Holding current
Latching current
Gate trigger current
Gate trigger voltage
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
V
T
I
H
I
L
I
GT
V
GT
half sine wave; T
mb
< 103
o
C
all conduction angles
I
T
=1.0 A
V
D
=12 V; I
GT
= 0.5 mA
V
D
=12 V; I
GT
= 0.5 mA
V
D
=12 V; I
T
= 10 mA
V
D
=12 V; I
T
= 10 mA
Test Conditions
Min
—
—
—
—
—
—
—
—
Typ
BT169D
BT169G
Max
—
—
—
1.35
5
6
200
0.8
Unit
V
A
A
V
mA
mA
uA
V
400
0.5
0.8
600
1.20
0.5
0.6
15
0.5