TIGER ELECTRONIC CO.,LTD
Product specification
Silicon Diffused Power Transistor
BU2508DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor
with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive
and collector current load variations resulting in a very low worst case dissipation.
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
1500
700
6
8.0
3.5
45
150
-65~150
Unit
V
V
V
A
A
W
o
o
C
C
TOP-3Fa
Storage Temperature
ELECTRICAL CHARACTERISTICS
(Tcase = 25
℃
unless otherwise specified)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Diode forward voltage
Symbol
Test Conditions
V
CB
=1500V, I
E
=0
V
EB
=7.5V, I
C
=0
I
C
=100mA, I
B
=0
V
CE
=5.0V, I
C
=1.0A
V
CE
=1.0V, I
C
=4.5A
Min.
—
—
700
—
4
—
—
—
Typ.
—
227
—
13
—
—
—
1.6
Max.
1.0
—
—
—
10
1.0
1.1
2.0
V
V
V
Unit
mA
mA
V
I
CES
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
BE(sat)
V
F
V
CE(sat)
I
C
=4.5A,I
B
=1.12A
I
C
=4.5A,I
B
=1.7A
I
F
=4.5A
TGS [ Tiger Electronic Co.,Ltd ]
