TIGER ELECTRONIC CO.,LTD
NPN Epitaxial Silicon Transistor
Product specification
BU406
High Voltage Switching
* Use In Horizontal Deflection Output Stage
Absolute Maximum Ratings ( Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
)
Value
400
200
6
7.0
4.0
60
150
Unit
V
V
V
A
A
W
o
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
C
C
Storage Temperature
-55~150
TO-220
Electrical Characteristics ( Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Turn Off Time
)
Test Conditions
V
CE
=400V, I
E
=0
V
CE
=250V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=50mA, I
B
=0
V
CE
=4V, I
C
=1.0A
200
10
1.0
1.2
10
0.75
V
V
MHz
us
Min.
Typ.
Max.
5.0
0.1
1.0
mA
V
Unit
mA
Symbol
I
CES
I
EBO
V
CEO
h
FE(1)
V
CE(sat)
I
C
=5.0A,I
B
=0.5A
V
BE(sat)
I
C
=5.0A,I
B
=0.5A
f
T
t
OFF
V
CE
=10V, I
C
=0.5A
I
C
=5A, I
B
=0.5A
TGS [ Tiger Electronic Co.,Ltd ]
