TIGER ELECTRONIC CO.,LTD
Product specification
MEDIUM Voltage & Fast Switching DarlingtonTransistor
DESCRIPTION
The devices are silicon Epitaxial Planar NPN power transistors in Darlington
configuration with integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
o
They can be used in horizontal output stages of 110 CRT video displays.
BU806
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
l
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
400
200
6
8.0
2.0
60
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
TO-220
Storage Temperature
Electrical Characteristics ( Ta = 25℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Damper Diode Forward Voltage
Storage Time
Symbol
Test Conditions
V
CE
=400V, V
BEO
=0
V
EB
=6V, I
C
=0
I
C
=100mA, I
B
=0
V
CE
=5V, I
C
=5.0A
Min.
—
—
200
200
—
—
—
—
Typ.
—
—
—
—
—
—
—
0.55
Max.
100
3.5
—
—
1.5
2.4
2
—
V
V
V
us
Unit
uA
mA
V
I
CES
I
EBO
V
CEO
h
FE(1)
V
CE(sat)
I
C
=5.0A,I
B
=50mA
V
BE(sat)
I
C
=5.0A,I
B
=50mA
V
F
T
S
I
F
=4.0A
I
C
=5A, I
B
=0.5A
TGS [ Tiger Electronic Co.,Ltd ]
