TIGER ELECTRONIC CO.,LTD
Product specification
600V N-Channel MOSFET
DESCRIPTION
FQP10N60
These N-Channel enhancement mode power field effect transistors are produced using Fairchild
’
s
proprietary,planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency switch mode power supplies.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
O
Symbol
V
DSS
I
D
I
DM
V
GSS
P
D
T
j
T
stg
Value
600
9.5
38
±30
156
150
-55~150
Unit
V
A
A
V
W
o
C
C
Storage Temperature
o
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Symbol
Test Conditions
Min.
600
—
—
—
2.0
—
—
Typ.
—
—
—
—
—
0.6
—
Max.
—
1.0
100
-100
4.0
0.73
1.4
Unit
V
uA
nA
nA
V
W
V
O
BV
DSS
V
GS
= 0V, I
D
=250μA
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
SD
V
DS
=600V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
= -30V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
R
DS(on)
V
GS
= 10 V, I
D
= 4.75 A
V
GS
= 0 V, I
S
= 9.5 A
TGS [ Tiger Electronic Co.,Ltd ]
