TIGER ELECTRONIC CO.,LTD
Product specification
200V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s
proprietary,planar, DMOS technology.
This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored
to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in
the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power
supplies, power factor correction and electronic lamp ballasts based on half bridge.
IRFS640B
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
O
Symbol
V
DSS
I
D
I
DM
V
GSS
P
D
T
j
T
stg
Value
200
18
72
30
125
150
-55~150
Unit
V
A
A
V
W
o
o
C
C
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Symbol
Test Conditions
Min.
200
10
100
-100
A
2.0
0.14
4.0
0.18
2.0
Typ.
Max.
Unit
V
uA
uA
uA
V
W
V
BV
DSS
V
GS
= 0V, I
D
=250 A
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
SD
V
DS
=200V, V
GS
=0V
V
GS
=30V, V
DS
=0V
V
GS
= -30V, V
DS
=0V
V
DS
= V
GS
, I
D
=250
R
DS(on)
V
GS
= 10 V, I
D
= 10.0 A
V
GS
= 0 V, I
S
= 18.0 A
TGS [ Tiger Electronic Co.,Ltd ]
