TIGER ELECTRONIC CO.,LTD
Product specification
N-Channel Power MOSFET
DESCRIPTION
Process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary switch in advanced
highefficiency, high-frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any applications with low gate
drive requirements.
IRFZ44N
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
O
Parameter
Drain-Source Voltage
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
l
V
DSS
I
D
I
DM
V
GSS
P
D
T
j
T
stg
Value
55
49
160
±
20
94
150
-55~150
Unit
V
A
A
V
W
o
o
C
C
TO-220
Storage Temperature
ELECTRICAL CHARACTERISTICS ( Ta = 25
O
C)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source Diode Forward Voltage
Symbol
Test Conditions
Min.
55
—
—
—
2.0
—
—
Typ.
—
—
—
—
3.0
—
—
Max.
—
10
100
-100
4.0
0.0175
1.3
Unit
V
uA
nA
nA
V
W
V
BV
DSS
V
GS
= 0V, I
D
=250
μ
A
I
DSS
I
GSSF
I
GSSR
V
GS(th)
V
SD
V
DS
=55V, V
GS
=0V
V
GS
=20V, V
DS
=0V
V
GS
= -20V, V
DS
=0V
V
DS
= V
GS
, I
D
=250
μ
A
R
DS(on)
V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, I
S
= 25 A
TGS [ Tiger Electronic Co.,Ltd ]
