TIGER ELECTRONIC CO.,LTD
Product specification
High Voltage and High Reliability
DESCRIPTION
NPN Silicon Transistor
■
High Speed Switching
■
Wide SOA
■
KSC5027
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
l
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
1100
800
7.0
3.0
1.5
50
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-220
Electrical Characteristics ( Ta = 25℃ )
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn Off Time
Symbol
Test Conditions
V
CE
=800V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=0.2A
V
CE
=5V, I
C
=1.0A
Min.
—
—
800
10
8
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
15
60
—
Max.
10
10
—
40
—
2.0
1.5
—
—
3.0
V
V
MHz
pF
us
Unit
uA
uA
V
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
I
C
=1.5A,I
B
=0.3A
V
BE(sat)
I
C
=1.5A,I
B
=0.3A
f
T
C
ob
t
S
V
CE
=10V, I
C
=0.2A
V
CB
=10V,I
E
=0,f=1.0MHz
I
C
=5I
B1
=-2.5I
B2
=2.0A,
h
FE
Classification
Classification
h
FE1
N
10 ~ 20
R
15 ~ 30
O
20 ~ 40
TGS [ Tiger Electronic Co.,Ltd ]
