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KTA1266 参数 Datasheet PDF下载

KTA1266图片预览
型号: KTA1266
PDF下载: 下载PDF文件 查看货源
内容描述: TO- 92塑封装晶体管( PNP ) [TO-92 Plastic-Encapsulate Transistors (PNP)]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 321 K
品牌: TGS [ Tiger Electronic Co.,Ltd ]
   
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
KTA1266
TRANSISTOR (PNP)
TO-92
FEATURES
Excellent h
FE
Linearity
Low
Noise
Complementary to KTC3198
MAXIMUM RATINGS (T
a
=25
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-0.15
625
150
-55-150
Units
V
V
V
A
mW
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
Test
conditions
Min
-50
-50
-5
-0.1
-0.1
70
25
-0.3
-1.1
80
7
10
V
V
MHz
pF
dB
400
Typ
Max
Unit
V
V
V
μA
μA
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
V
CE
=-6V, I
C
=-150mA
I
C
=-100mA, I
B
=-10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
c
=-0.1mA,
f=1KHZ, Rg=10KΩ
CLASSIFICATION OF
Rank
Range
Marking
h
FE(1)
O
70-140
Y
120-240
GR
200-400
A,June,2011