TIGER ELECTRONIC CO.,LTD
TO-220F Plastic-Encapsulate Diodes
MBRF2545CT
SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
TO-220F
1.ANODE
2.CATHODE
3.ANODE
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
Peak Repetitive Reverse Surge Current (Note 3)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
(JEDEC Method)
@ I
F
=30A, T
C
=125℃
@ I
F
=30A, T
C
= 25℃
@ T
C
= 25℃
@ T
C
=125℃
V
FM
I
RM
C
T
R
θJC
T
j
,T
STG
0.73
0.82
0.2
40
750
1.5
-55~+125
V
mA
pF
℃/W
℃
I
FSM
150
A
Tc=130℃
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
RRM
32
30
1.0
V
A
A
45
V
Value
Unit
2
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes: 1. Thermal resistance junction to case mounted heat sink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3．2.0μs pulse width, f = 1.0KHz.
A,Jun,2011
TGS [ Tiger Electronic Co.,Ltd ]
