TIGER ELECTRONIC CO.,LTD
SOT-89 Plastic-Encapsulate Transistors
MCK 100- 6，- 8
FEATURES
SOT-89
Silicon
Planar PNPN
Thyristor
1.KATHODE
Current-I
GT
: 200
μ
A
I
TRMS
:
V
DRM
:
0.8 A
MCK100-6：400 V
MCK100-8：600 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
2.ANODE
3.GATE
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
On state voltage
*
Symbol
V
TM
V
GT
unless
Test
otherwise
conditions
I
TM
=1A
V
AK
=7V
specified）
MIN
MAX
1.7
0.8
UNIT
V
V
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCK100-6
MCK100-8
Peak forward or reverse blocking
Current
Holding current
V
DRM
AND
I
DRM
= 10
μA
,V
MAX
=1010 V
400
600
V
V
RRM
I
DRM
I
RRM
I
H
A2
A1
V
AK
= Rated
V
DRM
or V
RRM
I
HL
= 20 mA , Av =
7V
10
µA
5
5
15
15
30
mA
µA
µA
Gate trigger current
I
GT
A
V
AK
=7V
30
80
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
TGS [ Tiger Electronic Co.,Ltd ]
