TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
MCR 100- 6, - 8
FEATURES
Current-I
GT
:
I
TRMS
:
V
DRM
:
TO-92
Silicon Planar PNPN Thyristor
1. KATHODE
2. GATE
200
0.8
MCR100-6:
MCR100-8:
µ
A
3. ANODE
A
400
600
V
V
1 2 3
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
On state voltage *
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Peak forward or reverse blocking
Current
Holding current
Symbol
V
TM
V
GT
V
DRM
AND
unless otherwise specified)
Test conditions
I
TM
=1A
V
AK
=7V
MIN
MAX
1.7
0.8
UNIT
V
V
I
DRM
= 10 µA ,V
MAX
=1010 V
400
600
V
V
RRM
I
DRM
I
RRM
I
H
A2
A1
V
AK
= Rated
V
DRM
or V
RRM
I
HL
= 20 mA , Av = 7 V
10
5
5
15
15
30
µA
mA
µA
µA
Gate trigger current
I
GT
A
V
AK
=7V
30
80
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration, duty cycle≤1%.
TGS [ Tiger Electronic Co.,Ltd ]
