TIGER ELECTRONIC CO.,LTD
Product specification
Silicon NPN Power Transistor
DESCRIPTION
Silicon NPN, high power transistors in a plastic envelope, primarily for
use in high-speed power switching circuits.
MJE13005
Absolute Maximum Ratings ( Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
)
Value
700
400
9
4.0
2.0
75
150
Unit
V
V
V
A
A
W
o
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
C
C
Storage Temperature
-55~150
TO-220
Electrical Characteristics ( Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn Off Time
)
Test Conditions
V
CE
=700V, I
E
=0
V
EB
=9V, I
C
=0
I
C
=10mA, I
B
=0
V
CE
=5V, I
C
=1.0A
V
CE
=5V, I
C
=1.0A
400
15
21
21
32
1.0
1.6
4
65
2.5
4.0
V
V
MHz
pF
us
Min.
Typ.
Max.
1.0
1.0
Unit
mA
mA
V
Symbol
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
I
C
=4.0A,I
B
=1.0A
V
BE(sat)
I
C
=2.0A,I
B
=0.5A
V
CE
=10V, I
C
=0.5A
f
T
C
ob
t
S
V
CB
=10V,I
E
=0,f=0.1MHz
I
B1
=-I
B2
=1.6A,T
P
=25 s
TGS [ Tiger Electronic Co.,Ltd ]
