TIGER ELECTRONIC CO.,LTD
MMBT2222ALT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The
MMBT2222ALT1
is designed for general purpose amplifier and
high-speed switching, medium-power switching applications.
Features
•
High frequency current gain.
•
High Speed Switching.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 75 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage .............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
Unit
V
V
V
nA
nA
nA
mV
V
V
V
Test Conditions
IC=10uA
IC=10mA
IC=10uA
VCB=60V
VCE=60V, VEB(OFF)=3V
VEB=3V
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
MHz
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
