TIGER ELECTRONIC CO.,LTD
MMBT4403LT1
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The
MMBT4403LT1
is designed for general purpose applications
requiring high breakdown voltages.
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature............................................................................................... -55~+150°C
Junction Temperature......................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 40 V
VEBO Emitter to Base Voltage ........................................................................................... 5.0 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEX
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
hFE1
hFE2
hFE3
hFE4
hFE5
fT
Cob
Min.
40
40
5.0
-
-
-
-
-
30
60
100
100
20
200
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
nA
mV
mV
mV
V
Test Conditions
IC=100uA
IC=1mA
IE=100uA
VCE=35V, VBE=0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
MHz
pF
TIGER ELECTRONIC CO.,LTD
TGS [ Tiger Electronic Co.,Ltd ]
