TIGER ELECTRONIC CO.,LTD
Silicon Bidirectional Triode Thyristors
GENERAL DESCRIPTION
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive TO - 92 package which is readily adaptable for use in
automatic insertion equipment.
STN1A60/80
Parameter
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
Max. Operating Junction
Temperature
Storage Temperature
Symbol
V
DRM
V
RRM
I
T(RMS)
I
TSM
T
j
T
stg
Typ
STN1A60
STN1A80
Unit
V
A
A
o
600
1.0
10
110
800
C
C
-45~150
o
Parameter
Repetitive peak off-state voltage
s
RMS on-state current
On-state voltage
Holding current
T2+G+
Gate trigger
current
T2+G-
T2-G-
T2-G+
Gate trigger voltage
Symbol
V
DRM
V
RRM
I
T(RMS)
V
T
I
H
Test Conditions
Min
—
Typ
STN1A60 STN1A80
Max
—
—
1.60
5
5.0
5.0
5.0
12
1.8
Unit
V
A
V
mA
600
1.0
—
—
—
—
—
—
0.5
800
all conduction angles
I
T
=1.5 A
V
D
=12 V; I
GT
=10 mA
—
—
—
—
I
GT
V
D
=6.0 V; R
L
= 10
Ω
—
—
—
mA
V
GT
V
D
=6.0 V; R
L
= 10
Ω
—
V
TGS [ Tiger Electronic Co.,Ltd ]
