TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
TIP31C / TIP32C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25
O
C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Value
100
100
5
3.0
1.0
40
150
-55~150
Unit
V
V
V
A
A
W
o
o
C
C
Storage Temperature
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Symbol
Test Conditions
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=0
V
CE
=4V, I
C
=1.0A
V
CE
=4V, I
C
=3.0A
100
25
10
50
1.2
1.8
3
V
V
MHz
Min.
Typ.
Max.
0.3
1.0
Unit
mA
mA
V
O
I
CEO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
I
C
=3A,I
B
=300mA
V
BE(sat)
V
CE
=4V,I
C
=3.0A
f
T
V
CE
=10V,I
C
=500mA
TGS [ Tiger Electronic Co.,Ltd ]
