2SA940
®
2SA940
Pb Free Plating Product
Pb
PNP Silicon Epitaxial Power Transistor
FEATURES
Complements the 2SC2073.
9.90
±0.20
φ3
0
±
.6
0.
20
4.50
±0.20
1.30
±0.20
15.70
±0.20
13.08
±0.20
COLLECTOR
2
BASE
1
9.19
±0.20
Vertical Output Applications.
2.80
±0.20
Power Amplifier Applications.
6.50
±0.20
APPLICATIONS
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1
23
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
Dimensions in Millimeters
TO-220C
Package Dimension
MAXIMUM RATING
operating temperature range applies unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
T
a
=25℃
T
c
=25℃
Value
-150
-150
-5
-1.5
-0.5
1.5
25
-55 to +150
Unit
V
V
V
A
A
W
℃
Junction and Storage Temperature
3.02
±0.20
1.27
±0.20
1.52
±0.20
2.40
±0.20
Page 1/3
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
