2SC2625
Pb Free Plating Product
®
2SC2625
Pb
80 WATT NPN EPITAXIAL SILICON TRANSISTOR
Features
High voltage,High speed switching
High reliability
Collector
Applications
Switching regulators
Ultrasonic generators
High frequency inverters
General purpose power amplifiers
C
B
E
Base
Emitter
Fig.1 simplified outline (TO-3PB) and symbol
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
C
I
B
P
C
T
j
T
stg
Ratings
450
400
400
7
10
3
80
+150
-55 to +150
Unit
V
V
V
V
A
A
W
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
I
CBO
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
t
on
t
stg
t
f
Test Conditions
I
CBO
= 1mA
I
CEO
= 10mA
I
C
= 1A
I
EBO
= 0.1mA
V
CBO
= 450V
V
EBO
= 7V
I
C
= 4A, V
CE
= 5V
I
C
= 4A, I
B
= 0.8A
I
C
= 7.5A, I
B1
= -I
B2
= 1.5A
R
L
= 20 ohm ,Pw = 20µs Duty=<2%
Min.
450
400
400
7
Typ.
Max.
Units
V
V
V
V
mA
mA
V
V
µs
µs
µs
-
-
-
-
1.0
0.1
1.2
1.5
1.0
2.0
1.0
10
Thermal characteristics
Item
Thermal resistance
Symbol
R
th(j-c)
Test Conditions
Junction to case
Min.
Typ.
Max.
1.55
Units
°C/W
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
