2SD1163/2SD1163A
®
Pb Free Plating Product
2SD1163/2SD1163A
Pb
NPN Silicon Epitaxial Power Transistor
FEATURES:
* Medium Power Linear Switching Applications
*
Low collector saturation voltage
TV horizontal deflection output
15.70
±0.20
2.80
±0.20
9.90
±0.20
φ3
0
±
.6
0.
20
4.50
±0.20
1.30
±0.20
13.08
±0.20
COLLECTOR
2
BASE
1
9.19
±0.20
6.50
±0.20
3
EMITTER
1. BASE
2. COLLECTOR
3. EMITTER
1
23
0.80
±0.20
2.54typ
2.54typ
0.50
±0.20
Dimensions in Millimeters
TO-220C
Package Dimension
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
2SD1163
V
CBO
Collector-base voltage
2SD1163A
2SD1163
V
CEO
Collector-emitter voltage
2SD1163A
V
EBO
I
C
I
CM
I
C(surge)
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector current-surge
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
150
6
7
10
20
40
150
-55~150
V
A
A
A
W
℃
℃
Open emitter
350
120
V
CONDITIONS
VALUE
300
V
UNIT
3.02
±0.20
1.27
±0.20
1.52
±0.20
2.40
±0.20
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© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
