DK48N18
®
Pb Free Plating Product
DK48N18
Pb
70V,158A N-Channel Trench Process Power MOSFET
General Description
The
DK48N18
is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged E
AS
capability and ultra low R
DS(ON)
is suitable for PWM, load
switching especially for E-Bike controller applications.
DK48N18
(TO-220 HeatSink)
Features
●
V
DS
=70V；I
D
=158A@ V
GS
=10V；
G
D
S
R
DS(ON)
<4.2mΩ @ V
GS
=10V
●
Special Designed for E-Bike Controller Application
●
Ultra Low On-Resistance
●
High UIS and UIS 100% Test
Schematic Diagram
Application
●
48V E-Bike Controller Applications
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
V
DSS
= 70V
I
DSS
= 158A
R
DS(ON)
= 3.5mΩ
Table 1.
V
DS
V
GS
Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V）
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Symbol
Value
70
±25
158
110
632
30
231
1.54
Unit
V
V
A
A
A
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
W/℃
P
D
E
AS
Single Pulse Avalanche Energy
(Note 2)
1300
-55 To 175
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=33V,V
G
=10V,I
D
=72.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/5
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
