DK48N75
Table 2. Thermal Characteristic
Symbol
R
JC
®
Parameter
Thermal Resistance,Junction-to-Case
Value
1.77
Unit
℃
/W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
V
GS
=0V I
D
=250μA
V
DS
=68V,V
GS
=0V
V
DS
=68V,V
GS
=0V
V
GS
=±25V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
Min
Typ
Max
Unit
70
1
10
±100
2
7
4
8.4
V
μA
μA
nA
V
mΩ
Dynamic Characteristics
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=50V,I
D
=40A,
V
GS
=10V
V
DS
=25V,V
GS
=0V,
f=1.0MHz
V
DS
=10V,I
D
=15A
18
3006
360
167
64
13.4
26.2
S
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Switching Times
t
d(on)
t
r
t
d(off)
t
f
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
=30V,I
D
=2A,R
L
=15Ω
V
GS
=10V,R
G
=2.5Ω
9
11
19
23
nS
nS
nS
nS
Source-Drain Diode Characteristics
I
SD
I
SDM
V
SD
t
rr
Q
rr
t
on
Source-Drain Current(Body Diode)
Pulsed Source-Drain Current(Body Diode)
Forward On Voltage
(Note 1)
(Note 1)
(Note 1)
68
272
T
J
=25℃,I
SD
=40A,V
GS
=0V
T
J
=25℃,I
F
=75A
di/dt=100A/μs
0.79
34
69
0.95
A
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by L
S
+L
D
)
Notes 1
.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, R
G
=25Ω, Starting T
J
=25℃
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/5
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