DK48N80
®
Pb Free Plating Product
DK48N80
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
The
DK48N80
is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged E
AS
capability and ultra low R
DS(ON)
is suitable for PWM, load
switching especially for E-Bike controller applications.
DK48N80
(TO-220 HeatSink)
Features
●
V
DS
=70V；I
D
=80A@ V
GS
=10V；
G
D
S
R
DS(ON)
<5.8mΩ @ V
GS
=10V
●
Special Designed for E-Bike Controller Application
●
Ultra Low On-Resistance
●
High UIS and UIS 100% Test
Schematic Diagram
Application
●
48V E-Bike Controller Applications
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
V
DSS
= 70V
I
DSS
= 80A
R
DS(ON)
= 5.5mΩ
Table 1. Absolute Maximum Ratings (TA=25 )
(TA=25℃)
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
Parameter
Drain-Source Voltage (
V
GS=
0V）
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Value
70
±25
80
78
320
30
145
1.9
Unit
V
V
A
A
A
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
W/℃
P
D
E
AS
Single Pulse Avalanche Energy
(Note 2)
590
-55 To 175
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃,V
DD
=33V,V
G
=10V,I
D
=48.5A
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
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THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
