DK64N90
®
Pb Free Plating Product
DK64N90
Pb
N-Channel Trench Process Power MOSFET Transistors
General Description
DK64N90 series
is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged
DK64N90
(TO-220 HeatSink)
E
AS
capability and ultra low R
DS(ON)
is suitable for PWM,
load switching especially for E-Bike controller applications.
G
D
S
Features
●
V
DS
=85V; I
D
=92A@ V
GS
=10V;
R
DS(ON)
<7.45mΩ @ V
GS
=10V
●
Special Designed for E-Bike Controller Application
●
Ultra Low On-Resistance
●
High UIS and UIS 100% Test
DK64N90F
(TO-220F FullPak)
Schematic Diagram
Application
●
●
●
●
●
G
D
S
64V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Inverter Application
Amplifier Application
V
DS
= 85 V
I
D
= 92A
DK64N90B
(TO-263/D2PAK)
D
G
S
R
DS(ON)
= 6.2 m
Ω
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
Drain-Source Voltage (
V
GS=
0V)
Gate-Source Voltage (
V
DS=
0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Value
85
±25
92
64.4
368
30
139
0.93
Unit
V
V
A
A
A
Peak Diode Recovery Voltage
Maximum Power Dissipation(Tc=25℃)
Derating Factor
V/ns
W
W/℃
P
D
E
AS
Single Pulse Avalanche Energy
(Note 2)
625
-55 To 175
mJ
℃
T
J
,T
STG
Operating Junction and Storage Temperature Range
Notes 1.
Repetitive Rating: Pulse width limited by maximum junction temperature
2.
E
AS
condition:T
J
=25℃
,
V
DD
=40V,V
G
=10V,R
G
=25Ω
B
B
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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