ES5A thru ES5J
ES5A thru ES5J
Pb
®
Pb Free Plating Product
5.0 Ampere Surface Mount Type Super Fast Recovery Rectifier Diodes
FEATURE
Glass passivated chip junction
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
OUTLINE
Cathode Band
Unit:inch(millimeter)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
MECHANICAL DATA
Case:SMC/DO-214AB
Package
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode band
Mounting Position:
Any
Weight:
0.22 gram approximately
0.103 (2.62)
0.079 (2.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008 (0.2)
0.002(0.05)
APPLICATION
LED SMPS/Industrial power supply
HID ballast stabilizer
Telecommunication SMPS/LED street lamp
SMC/DO-214AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES5A ES5B ES5C
ES5D ES5E
ES5G
ES5J
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
5.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
JA
T
J
,
T
STG
0.95
125
1.3
10.0
300.0
35
58.0
47.0
-65 to +150
1.7
Amps
Volts
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
