F12A20CT thru F12A60CT
®
Pb Free Plating Product
F12A20CT thru F12A60CT
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Pb
12.0 Ampere Common Anode Fast Recovery Rectifier Diodes
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Application
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
.548(13.93)
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Negative
Positive
*
Doubler
*
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "F12C"
Prefix "F12A"
Available for Mass Production
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 6.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
F12C20CT F12C40CT F12C60CT
UNIT
F12A20CT F12A40CT F12A60CT
200
140
200
400
280
400
12.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
C/W
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
