F16A20CT thru F16A60CT
®
F16A20CT thru F16A60CT
Pb Free Plating Product
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Pb
16.0 Ampere Heatsink Dual Common Anode Fast Recovery Diodes
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Case
Negative
Positive
*
Doubler
*
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "F16C"
Prefix "F16A"
Available for Mass Production
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
o
F16C20CT F16C40CT F16C60CT
UNIT
F16A20CT F16A40CT F16A60CT
200
140
200
400
280
400
16.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
175
150
A
V
F
0.98
1.3
10.0
250
35
90
2.2
-55 to + 150
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
C
/W
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
