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F20C60A 参数 Datasheet PDF下载

F20C60A图片预览
型号: F20C60A
PDF下载: 下载PDF文件 查看货源
内容描述: 20.0安培双共阳极快恢复整流二极管 [20.0 Ampere Dual Common Anode Fast Recovery Rectifier Diode]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 600 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号F20C60A的Datasheet PDF文件第2页  
F20C20A thru F20C60A
F20C20A thru F20C60A
Pb Free Plating Product
20.0 Ampere Dual Common Anode Fast Recovery Rectifier Diode
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
®
Pb
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.548(13.93)
.025(0.65)MAX
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
.1(2.54)
.1(2.54)
Case
Case
Case
Positive
Common Cathode
Suffix "C"
Negative
Common Anode
Suffix "A"
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
F20C20C
F20C20A
F20C20D
200
140
200
F20C40C
F20C40A
F20C40D
400
280
400
20.0
F20C60C
F20C60A
F20C60D
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
200
175
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10.0
250
35
1.7
V
uA
uA
nS
120
-55 to +150
70
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/