FCF10A20 thru FCF10A60
®
Pb
FCF10A20 thru FCF10A60
Pb Free Plating Product
10.0 Ampere Insulated Full-pak Common Cathode Fast Recovery Rectifier
Features
ITO-220AB
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
Application
Mechanical Data
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case:Fully molded isolation TO-220FH
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Case
Case
Case
Case
Negative
Positive
*
Doubler
*
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "FCF"
Suffix "FRF"
Available for Mass Production
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 5.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
FCF10A20 FCF10A40 FCF10A60
UNIT
200
140
200
400
280
400
10.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
100
A
V
F
I
R
Trr
C
J
R
JC
T
J
, T
STG
0.98
1.3
10.0
250
35
65
2.2
-55 to +150
1.7
V
uA
uA
nS
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
