欢迎访问ic37.com |
会员登录 免费注册
发布采购

FEP16BTD 参数 Datasheet PDF下载

FEP16BTD图片预览
型号: FEP16BTD
PDF下载: 下载PDF文件 查看货源
内容描述: 16.0安培快速高效的塑料半桥式整流器 [16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers]
分类和应用:
文件页数/大小: 2 页 / 344 K
品牌: THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
 浏览型号FEP16BTD的Datasheet PDF文件第2页  
FEP16A thru FEP16J
®
Pb Free Plating Product
FEP16A thru FEP16J
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Pb
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Features
Glass passivated chip junction
Fast switching for high efficiency
Low forward voltage drop and High current capability
Low reverse leakage current
High surge current capability
Application
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.269(6.85)
.226(5.75)
.624(15.87)
.50(12.7)MIN
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on body
Mounting position: Any
Weight: 2.03 grams
.038(0.96)
.019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control
Plating Power Supply|UPS|Inverter
Car Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive CT
Common Cathode
Suffix "T"
Negative CT
Common Anode
Suffix "TA"
Doubler
Series Connection
Suffix "TD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "T"
Common Anode Suffix "TA"
Anode and Cathode Coexistence Suffix "TD"
FEP16AT FEP16BT
FEP16DT FEP16FT
FEP16GT
FEP16JT
SYMBOL
FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA
UNIT
FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=100
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
V
RRM
V
RMS
V
DC
IF
(AV)
50
35
50
100
70
100
200
140
200
16.0
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
175
150
A
V
F
0.98
10.0
250
35
90
2.2
-55 to + 150
1.3
1.7
V
uA
uA
nS
pF
o
I
R
Trr
C
J
R
JC
T
J
, T
STG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I = 1.0A, Irr = 0.25A.
R
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/